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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
*Notes:
1. V GS = 0V
0.5
*Notes:
1. V GS = 10V
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-100
2. I D = 1mA
-50 0 50 100 150 200
o
0.0
-100
2. I D = 8A
-50 0 50 100 150
o
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
20 μ s
20
10
1
Operation in This Area
DC
10ms
1ms
100 μ s
15
10
is Limited by R DS(on)
1. T C = 25 C
2. T J = 150 C
0.1
*Notes:
o
o
5
T C , Case Temperature [ C ]
0.01
1
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
1000
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
2
1
0.5
0.2
0.1
0.1
0.05
P DM
t 1
t 2
0.02
*Notes:
10
10
10
10
1. Z θ JC (t) = 0.93 C/W Max.
10
0.01
0.005
0.01
Single pulse
-5
-4
-3
-2
o
2. Duty Factor, D= t 1 /t 2
3. T JM - T C = P DM * Z θ JC (t)
-1
1
1 ,
t Rectangular Pulse Duration [sec]
?2009 Fairchild Semiconductor Corporation
FCA16N60N Rev. C1
4
www.fairchildsemi.com
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